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Strain-Induced Effects in Advanced MOSFETs
Barnes and Noble
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Strain-Induced Effects in Advanced MOSFETs in Franklin, TN
Current price: $169.99
Barnes and Noble
Strain-Induced Effects in Advanced MOSFETs in Franklin, TN
Current price: $169.99
Loading Inventory...
Size: OS
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
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